Sürdürülebilir Kalkınma Amaçları

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• MakaleAçık Erişim2026Scopus SJRQ2/r/kostu/10375
  Preparation of semi-transparent V2AlC thin films using the thermionic vacuum arc technique: crystal and substrate effects on the electrochemical performance

  Elmas, Saliha; Rafighi, Mohammad; Mohammadigharehbagh, Reza; Akırtın, Ahmet; Pat, Suat; Korkmaz, Şadan

  Among the MAX phases, vanadium aluminum carbide (V2AlC) is one of the remarkable elements due to its superior properties. These intriguing properties stem from physical characteristics such as crystallinity, grain size, and so on, which further affect its electrochemical performance. One of the major and significant issues in this way is using an appropriate substrate to form the desired crystal orientation. According to the results, the crystal nature of the substrate and conductive layer illuminates the formation of polycrystalline V2AlC with various preferential orientations. This subject also directly changed the electrochemical performance, Li-ion diffusion, and resistivity of the V2AlC thin film. The XRD, high-resolution XPS, and Raman spectroscopy results revealed V2AlC formation on all substrates. In all cases, the surface characteristics were confirmed nano-dimensional growth, with a high level of compactness, homogeneity, and a crack-free landscape. Moreover, the optical measurements exhibited semi-transparency of the thin film with lower disorder but higher cutoff energy when coated upon the ITO/PET substrate. The electrochemical results highlighted that the V2AlC coated upon the ITO/PET platform outperforms due to non-Faradaic behavior, lower disorder, and small grain size, facilitating Li-ion diffusion and more capacity storage behavior inside the aqueous LiClO4-PC (0.1 M). Subsequently, the selected material paved the way for using it as a promising candidate in metal-ion storage.

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• MakaleAçık Erişim2024Scopus SJRQ4/r/kostu/10304
  Boron-doped WO3 thin films prepared by thermionic vacuum arc technique: The structural, surface, and optical properties; [Termiyonik vakum ark tekniği kullanılarak hazırlanan bor katkılı WO3 ince filmler: fiziksel özellikler]

  Elmas, Saliha

  Improvement in the physical properties of WO3 thin films is of great interest among researchers. In this work, boron as a dopant was selected to enhance the physical characteristics of the WO3 thin films on glass and silicon wafer substrates. To achieve this aim, a plasma-based, well-known thermionic vacuum arc (TVA) technique was utilized to prepare the films with varying boron percent, followed by structural, optical, and microscopic characterization. The roughness of the films directly depends on the boron amount and nature of the substrate. The structural measurement proved the formation of WO3 phases on both substrates. An increase in the dopant amount caused a shift in the dominant peak in the X-ray diffraction patterns. The crystallite sizes of the films varied in the range of 14-49 nm. According to the optical results, the optical band gaps (Eg) of the WO3:B (1%) and WO3:B (3%) films were obtained as 3.23 and 3.25 eV, respectively. The increase in the boron amount led to an increase in the packing density of the films. This behavior was not related to substrate properties. These results suggest a direct relationship between crystallite size and lower optical loss function.

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• MakaleAçık Erişim2023Scopus SJRQ2/r/kostu/10357
  Influence of annealing temperature in ITO thin films prepared by Thermionic Vacuum Arc (TVA) Technique

  Elmas, Saliha

  In this research work, ITO thin film with 100 nm thickness was produced on a glass slide substrate by using the Thermionic Vacuum Arc (TVA) technique. After the deposition process, ITO thin film was annealed at 300, 400, and 480 °C in O2 ambient for 1 h. The effect of annealing temperatures on the optical, structural, and surface properties of the ITO thin film was investigated. Changes in the annealed ITO thin film characteristics were observed. The XRD results analysis showed a crystallization of the ITO thin films along (222) and (440) diffraction peaks after the annealing process. The band gap energy for the as-deposited ITO thin film was estimated as 3.82 eV, which increased from 3.96 to 4.11 eV for the annealed ITO thin films. The FESEM and AFM images of ITO thin films show a homogenous deposition, smooth, granular, and dense form. The CA mean of the as-deposited and annealed ITO thin films was measured in the range of 88°–33°. The experimental results showed that different annealing temperatures influenced the structural, optical, surface morphology and wettability properties of the ITO thin films.

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